Plano, TX, United States of America

Kazuhiro Hamamoto

This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 1999-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhiro Hamamoto. Retrieved from https://idiyas.com/inventor/kazuhiro-hamamoto-k4qt3utt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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3 patents (USPTO):Explore Patents

Title: Kazuhiro Hamamoto: Innovator in Semiconductor Technology

Introduction

Kazuhiro Hamamoto is a notable inventor based in Plano, TX, who has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, he has developed innovative methods that enhance the manufacturing processes of integrated circuits and semiconductor devices.

Latest Patents

One of his latest patents is titled "Method for filling a via opening or contact opening in an integrated circuit." This invention describes an integrated circuit that includes a substrate with a conductive region and a dielectric layer disposed over the substrate. An upwardly tapering frustoconical opening is created through the dielectric layer to the conductive region. A barrier layer is then applied, followed by a thin metal layer, which is pinched off or closed by the metal layer at the upper end of the opening. Heat and pressure are applied simultaneously, allowing the metal layer to flow and completely fill the available space within the opening. Selected portions of the metal layer external to the opening are then etched away, and a further dielectric layer is applied over the barrier and metal layers, followed by planarization.

Another significant patent is the "Method of making a semiconductor device having a flat surface." This manufacturing method is designed for semiconductor devices such as dynamic RAM. It involves removing the layer part more on the high position than an arbitrary position on a step forming a gradation by just a prescribed thickness when flattening a layer with a gradation formed of a high position part and a low position part. The projecting part created after the etching, which exists more on the low position side than at the arbitrary position of the gradation, is eliminated by heat treatment.

Career Highlights

Kazuhiro Hamamoto is currently employed at Texas Instruments Corporation, where he continues to innovate and contribute to advancements in semiconductor technology. His work has been instrumental in improving the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

He has collaborated with Shigeo Ashigaki, further enhancing the innovative capabilities within his field.

Conclusion

Kazuhiro Hamamoto's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as a key innovator in the industry. His inventions continue to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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