Yokohama, Japan

Katsura Ikemiya


Average Co-Inventor Count = 7.0

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2018-2019

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2 patents (USPTO):Explore Patents

Title: Katsura Ikemiya: Innovator in Boron Nitride Technology

Introduction

Katsura Ikemiya is a notable inventor based in Yokohama, Japan. She has made significant contributions to the field of materials science, particularly in the development of agglomerated boron nitride particles. With a total of 2 patents, her work focuses on enhancing the thermal conductivity of materials used in semiconductor devices.

Latest Patents

Ikemiya's latest patents include innovations related to agglomerated boron nitride particles and their production methods. These inventions aim to provide boron nitride particles that serve as effective thermally conductive fillers for heat dissipation sheets in power semiconductor devices. The agglomerated boron nitride particles exhibit excellent isotropy of thermal conductivity, degradation resistance, and kneadability with resin. The unique characteristics of these particles are defined by a peak area intensity ratio of the (100) plane to the (004) plane of 0.25 or more, and an average crystallite size of 375 Å or more.

Career Highlights

Katsura Ikemiya is currently employed at Mitsubishi Chemical Corporation, where she continues to innovate in the field of materials science. Her work has positioned her as a key figure in the development of advanced materials for electronic applications.

Collaborations

Ikemiya collaborates with esteemed colleagues such as Masanori Yamazaki and Takuya Suzuki, contributing to a dynamic research environment that fosters innovation.

Conclusion

Katsura Ikemiya's contributions to the field of boron nitride technology highlight her role as a leading inventor in materials science. Her innovative patents are paving the way for advancements in thermal management solutions for semiconductor devices.

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