Katsumi Yamanoguchi

Title: Katsumi Yamanoguchi: Innovator in Field Effect Transistor Technology

Introduction

Katsumi Yamanoguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. With a total of 4 patents to his name, Yamanoguchi's work has had a substantial impact on the industry.

Latest Patents

Yamanoguchi's latest patents focus on advancements in field effect transistors and multilayered epitaxial films. His inventions aim to reduce leak current components by managing the conduction of residual carriers in buffer layers. This innovation enhances the breakdown voltage and improves the carrier confinement effect within the channel, leading to better pinch-off characteristics. Specifically, his work on GaN-type field effect transistors incorporates a composition-modulated AlGaN layer as a buffer, which gradually reduces aluminum composition towards the top. This design allows for optimized gate lengths and channel layer thicknesses, ensuring superior performance in semiconductor applications.

Career Highlights

Throughout his career, Yamanoguchi has worked with notable companies such as NEC Corporation and Renesas Electronics Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Yamanoguchi has collaborated with esteemed colleagues, including Hironobu Miyamoto and Yuji Ando. These partnerships have fostered a collaborative environment that has led to significant advancements in their respective fields.

Conclusion

Katsumi Yamanoguchi's contributions to the field of field effect transistors exemplify his innovative spirit and dedication to advancing semiconductor technology. His patents and collaborations continue to influence the industry, showcasing the importance of his work.