Tokyo, Japan

Katsuhisa Taguchi

This inventor holds 1 USPTO granted patent. Top assignee: Semitec Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuhisa Taguchi. Retrieved from https://idiyas.com/inventor/katsuhisa-taguchi-stjt2mj2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Katsuhisa Taguchi

Introduction

Katsuhisa Taguchi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of temperature measurement technology. His work focuses on developing devices that enhance precision and responsiveness in measuring deep temperatures.

Latest Patents

One of his key inventions is a deep temperature measuring device and method. This device is designed to measure the deep temperature of a measured object with high precision, accuracy, and speed. The invention includes a thermosensitive part that senses temperature, a measurement thin film thermistor, and a heating element layer. These components work together to ensure accurate temperature readings.

Career Highlights

Katsuhisa Taguchi is associated with Semitec Corporation, where he continues to innovate in temperature measurement technologies. His expertise in this area has led to advancements that benefit various industries requiring precise temperature control.

Collaborations

He collaborates with Toshiyuki Nojiri, contributing to the development of innovative solutions in their field. Their partnership enhances the research and development efforts at Semitec Corporation.

Conclusion

Katsuhisa Taguchi's work exemplifies the importance of innovation in technology. His contributions to deep temperature measurement devices reflect a commitment to precision and accuracy in scientific measurement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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