Company Filing History:
Years Active: 2013
Title: Kati Hemmann: Innovator in Semiconductor Technology
Introduction
Kati Hemmann is a notable inventor based in Bremgarten, Switzerland. She has made significant contributions to the field of semiconductor technology, particularly with her innovative designs in diode technology. Her work exemplifies the intersection of engineering and practical application in modern electronics.
Latest Patents
Kati Hemmann holds a patent for a fast recovery diode. This invention features an n-doped base layer with a cathode side and an anode side. The anode side is equipped with a p-doped anode layer that has a unique doping profile consisting of at least two sublayers. The first sublayer has a maximum doping concentration that is higher than that of any other sublayer. The last sublayer depth ranges between 90 to 120 micrometers, ensuring optimal performance. The doping profile is designed to achieve a specific concentration range, enhancing the diode's efficiency.
Career Highlights
Kati Hemmann is currently employed at Abb Technology AG, where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in developing technologies that improve the performance and reliability of electronic components.
Collaborations
Kati collaborates with talented professionals in her field, including Jan Vobecky and Hamit Duran. These partnerships foster a creative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Kati Hemmann's contributions to semiconductor technology through her innovative patent demonstrate her expertise and commitment to advancing the field. Her work not only enhances electronic components but also sets a foundation for future innovations in the industry.