Abb Technology Ag

Kati Hemmann

Munaf Rahimo

Jan Vobecky

Hamit Duran

A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*10cmand 2*10cmand which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 &#x3bc;m. The doping profile of the anode layer declines such that a doping concentration in a range of 5*10cmand 1*10cmis reached between a first depth, which is at least 20 &#x3bc;m, and a second depth, which is at maximum 50 &#x3bc;m. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.

Growing community of inventors

Bremgarten, Switzerland

Kati Hemmann