The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Nov. 09, 2010
Jan Vobecky, Lenzburg, CH;
Kati Hemmann, Bremgarten, CH;
Hamit Duran, Turgi, CH;
Munaf Rahimo, Uezwil, CH;
Jan Vobecky, Lenzburg, CH;
Kati Hemmann, Bremgarten, CH;
Hamit Duran, Turgi, CH;
Munaf Rahimo, Uezwil, CH;
ABB Technology AG, Zurich, CH;
Abstract
A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*10cmand 2*10cmand which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 μm. The doping profile of the anode layer declines such that a doping concentration in a range of 5*10cmand 1*10cmis reached between a first depth, which is at least 20 μm, and a second depth, which is at maximum 50 μm. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.