Company Filing History:
Years Active: 2017
Title: Karl Knieriem: Innovator in High Electron Mobility Transistors
Introduction
Karl Knieriem is a notable inventor based in Mayward, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has led to advancements that enhance the performance of electronic devices.
Latest Patents
Knieriem holds a patent for a high electron mobility transistor with periodically carbon doped gallium nitride. This patent describes a method for forming a HEMT device that includes a plurality of alternating layers of undoped gallium nitride (GaN) and carbon doped gallium nitride (c-GaN). The method involves forming a channel layer stack on a substrate, which is crucial for the performance of the HEMT device. The patent emphasizes the importance of growth conditions that suppress and promote the incorporation of carbon in gallium nitride layers, respectively.
Career Highlights
Karl Knieriem is associated with Toshiba Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also had a broader impact on the industry. With a focus on innovation, Knieriem continues to push the boundaries of what is possible in electronic device performance.
Collaborations
Knieriem has collaborated with Jeffrey Craig Ramer, working together to explore new avenues in semiconductor research and development. Their partnership has fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Karl Knieriem's contributions to the field of high electron mobility transistors exemplify the spirit of innovation. His work at Toshiba Corporation and his patent on carbon doped gallium nitride technology highlight his role as a leading inventor in the semiconductor industry.