Company Filing History:
Years Active: 2009-2025
Title: The Innovative Contributions of Karen Hildegard Ralston Kirmse
Introduction
Karen Hildegard Ralston Kirmse is a prominent inventor based in Richardson, TX (US). She has made significant contributions to the field of semiconductor technology, holding a total of seven patents. Her work focuses on advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
One of her latest patents is for a Normally-on gallium nitride based transistor with a p-type gate. This semiconductor device features a gallium nitride based low threshold depletion mode transistor (GaN FET) with a threshold potential between −10 volts and −0.5 volts. The GaN FET includes a channel layer of III-N semiconductor material that supports a two-dimensional electron gas (2DEG). Additionally, it has a barrier layer of III-N semiconductor material and a p-type gate, which is designed to optimize performance without a dielectric layer between the gate and the barrier layer.
Another notable patent involves selective etches for reducing cone formation in shallow trench isolations. This technique introduces separate etch steps for fabricating shallow trench isolation structures, minimizing the number of trench cones during the formation of shallow trenches. By employing different etching parameters for various regions of a substrate, the method ensures that the sidewall slopes between trenches remain consistent.
Career Highlights
Karen Kirmse is currently employed at Texas Instruments Corporation, where she continues to innovate in the semiconductor industry. Her expertise and contributions have positioned her as a key figure in her field.
Collaborations
Throughout her career, Kirmse has collaborated with notable colleagues, including Jonathan Philip Davis and Ricky A Jackson. These partnerships have further enhanced her work and the impact of her inventions.
Conclusion
Karen Hildegard Ralston Kirmse's innovative work in semiconductor technology has led to significant advancements in electronic devices. Her patents reflect her commitment to improving performance and efficiency in the industry.