Karan Gupta

Title: Karan Gupta: Innovator in Multi-Voltage RAM Technology

Introduction

Karan Gupta is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of integrated circuits, particularly in the area of data transmission across different voltage domains.

Latest Patents

Karan Gupta holds 1 patent for his invention titled "Multi-voltage RAM used to cross clock and voltage domains." This patent provides improvements for transmitting data between different voltage domains of an integrated circuit (IC), such as a chip. The invention introduces a data transfer circuit that utilizes a multi-voltage RAM, referred to as MVRAM, for effective data transmission across varying voltage domains. The MVRAM features multiple memory cells with write ports and read ports operating on different clock and voltage domains. This allows write operations to occur entirely on the write domain voltage while read operations can take place on the read domain voltage. The data transfer circuit includes write logic operating at a first operating voltage, read logic at a second operating voltage, and MVRAM with write ports functioning under the first operating voltage and read ports under the second operating voltage.

Career Highlights

Karan Gupta is currently employed at Nvidia Corporation, where he continues to innovate and contribute to advancements in technology. His work focuses on enhancing the efficiency and performance of integrated circuits.

Collaborations

Karan collaborates with talented individuals such as Jason Golbus and Chad Parsons, who are also part of the innovative team at Nvidia Corporation.

Conclusion

Karan Gupta's contributions to the field of multi-voltage RAM technology exemplify his commitment to advancing integrated circuit design. His innovative approach to data transmission across voltage domains is a testament to his expertise and dedication to the field.