Nirasaki, Japan

Kaoru Fujiwara

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kaoru Fujiwara. Retrieved from https://idiyas.com/inventor/kaoru-fujiwara-wml9mx40

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Kaoru Fujiwara: Innovator in Defect Inspection Technology

Introduction

Kaoru Fujiwara is a notable inventor based in Nirasaki, Japan. He has made significant contributions to the field of defect inspection technology, particularly in methods and apparatuses that enhance the accuracy of inspections on substrates.

Latest Patents

Fujiwara holds a patent for a "Defect inspecting method and defect inspecting apparatus." This innovative technology provides a method and apparatus for inspecting defects in shapes formed on substrates. The primary inspection is conducted sequentially on specific patterns across multiple divided regions of the substrate using an optical method. Following this, one or more regions are selected for secondary inspection, where defects are detected using an electron beam.

Career Highlights

Kaoru Fujiwara is associated with Tokyo Electron Limited, a leading company in the semiconductor and electronics manufacturing industry. His work has been instrumental in advancing inspection technologies that are crucial for maintaining quality in manufacturing processes.

Collaborations

Fujiwara has collaborated with notable colleagues, including Teruyuki Hayashi and Misako Saito, contributing to the development of innovative solutions in defect inspection.

Conclusion

Kaoru Fujiwara's contributions to defect inspection technology exemplify the importance of innovation in manufacturing. His work continues to influence the industry, ensuring higher standards of quality and efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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