Tokyo, Japan

Kanichi Okuda

This inventor holds 1 USPTO granted patent. Top assignee: Dowa Mining Co., Ltd.. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kanichi Okuda. Retrieved from https://idiyas.com/inventor/kanichi-okuda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Kanichi Okuda: Innovator in Gallium Purification Technology

Introduction

Kanichi Okuda is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor materials, particularly through his innovative work on gallium purification.

Latest Patents

Okuda holds a patent for "High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same." This patent describes a process for separating impurities from raw gallium material. The method involves progressively solidifying the gallium while stirring, which allows for the effective separation of the liquid phase from the solidified phase. This technique is crucial for obtaining metallic gallium suitable for compound semiconductor preparation.

Career Highlights

Throughout his career, Okuda has demonstrated a commitment to advancing semiconductor technology. His work has not only contributed to the efficiency of gallium purification but has also paved the way for improved semiconductor applications.

Collaborations

Okuda has collaborated with esteemed colleagues such as Takeharu Yamamura and Hidekazu Kato. Their joint efforts have further enhanced the research and development in the field of semiconductor materials.

Conclusion

Kanichi Okuda's innovative approach to gallium purification exemplifies the importance of research in semiconductor technology. His contributions continue to influence the industry and support advancements in electronic materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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