Hefei, China

Kangwei Xia

This inventor holds 1 USPTO granted patent. Top assignee: University of Science and Technology of China. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kangwei Xia. Retrieved from https://idiyas.com/inventor/kangwei-xia-va8xdijs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Kangwei Xia in Optical Information Storage

Introduction

Kangwei Xia is a prominent inventor based in Hefei, China. He has made significant contributions to the field of optical information storage technology. His innovative approach focuses on utilizing fluorescence defects in wide bandgap materials for information storage and acquisition.

Latest Patents

Kangwei Xia holds a patent titled "Method for storing and acquiring information using fluorescence defects in wide bandgap materials." This patent describes a method that includes determining a processing parameter group to store target information into wide bandgap materials. The method involves performing processing at M storage addresses of the wide bandgap materials, generating fluorescence defects that correspond to the target information.

Career Highlights

Kangwei Xia is affiliated with the University of Science and Technology of China, where he continues to advance research in optical information storage. His work has garnered attention for its potential applications in enhancing data storage technologies.

Collaborations

Kangwei Xia collaborates with notable colleagues, including Jingyang Zhou and Ya Wang, who contribute to his research endeavors.

Conclusion

Kangwei Xia's innovative methods in optical information storage represent a significant advancement in the field. His contributions are paving the way for future developments in data storage technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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