Taipei, Taiwan

Kang-Feng Lee

This inventor holds 3 USPTO granted patents and 6 published patent applications. Top assignee: Industrial Technology Research Institute. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kang-Feng Lee. Retrieved from https://idiyas.com/inventor/kang-feng-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014-2019

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3 patents (USPTO):Explore Patents

Title: Kang-Feng Lee: Innovator in Magnetic Field Generation and Atomic Layer Deposition

Introduction

Kang-Feng Lee is an inventor based in Taipei City, Taiwan. He is known for his innovative approaches in the fields of magnetic field generation and atomic layer deposition. Although he currently holds no granted patents, his work is significant in advancing technology in these areas.

Latest Patent Applications

Kang-Feng Lee has submitted several notable patent applications. One of his latest applications is for "UNIFORM MAGNETIC FIELD GENERATING EQUIPMENT AND MAGNETIC FIELD GENERATING UNIT THEREOF." This invention includes a magnetic field generating unit composed of three magnetic components, designed to create a uniform planar magnetic field. The arrangement of these components allows for the generation of a consistent magnetic field, which can have various applications in technology.

Another significant application is for "PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF." This apparatus features multiple reaction chambers with adjustable partition units that control the separation or communication between reaction spaces. This design aims to prevent contamination of substrates by avoiding interference between process gases and resultant particles.

Conclusion

Kang-Feng Lee's contributions to the fields of magnetic field generation and atomic layer deposition demonstrate his innovative spirit and potential impact on technology. His latest patent applications reflect a commitment to advancing these technologies, even as he works towards obtaining granted patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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