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Kang-Cheng Lin

USPTO Granted Patents = 12

Average Co-Inventor Count = 1.2

ph-index = 9

Forward Citations = 229(Granted Patents)

Location History:

Taipei Hsien, TW (1997 - 1998)
Yung Ho, TW (1998)
Hsin-Chu, TW (1999)
Chung Ho, TW (2000)
Taipei, TW (2000 - 2002)

Company Filing History:

12 out of 9,138

Industrial Technology Research Institute

Years Active: 1997-2002

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6348733 - Dual damascene process and structure with dielectric barrier layer (2002-02-19),

2. 6316357 - Method for forming metal silicide by laser irradiation (2001-11-13),

3. 6140220 - Dual damascene process and structure with dielectric barrier layer (2000-10-31),

4. 6093632 - Modified dual damascene process (2000-07-25),

5. 6063653 - Method of fabricating a TFT-LCD (2000-05-16),

6. 6018166 - Polysilicon carbon source/drain heterojunction thin-film transistor (2000-01-25),

7. 5920772 - Method of fabricating a hybrid polysilicon/amorphous silicon TFT (1999-07-06),

8. 5864150 - Hybrid polysilicon/amorphous silicon TFT and method of fabrication (1999-01-26),

9. 5834071 - Method for forming a thin film transistor (1998-11-10),

10. 5811325 - Method of making a polysilicon carbon source/drain heterojunction (1998-09-22),

11. 5783843 - Method of fabricating polycrystalline silicon thin-film transistor (1998-07-21),

12. 5658808 - Method of fabricating polycrystalline silicon thin-film transistor (1997-08-19),

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