Taipei, Taiwan

Kang-Cheng Lin

This inventor holds 12 USPTO granted patents. Top assignee: Industrial Technology Research Institute. Active years: 1997-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kang-Cheng Lin. Retrieved from https://idiyas.com/inventor/kang-cheng-lin-u01ou672

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 9

Forward Citations = 230(Granted Patents)


Location History:

  • Taipei Hsien, TW (1997 - 1998)
  • Yung Ho, TW (1998)
  • Hsin-Chu, TW (1999)
  • Chung Ho, TW (2000)
  • Taipei, TW (2000 - 2002)

Company Filing History:


Years Active: 1997-2002

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12 patents (USPTO):Explore Patents

Title: Innovations of Kang-Cheng Lin

Introduction

Kang-Cheng Lin is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on improving manufacturing processes and structures that enhance electronic devices.

Latest Patents

One of his latest patents is the "Dual damascene process and structure with dielectric barrier layer." This invention describes an improved dual damascene structure and process for manufacturing it. In this process, the via hole is first lined with a layer of silicon nitride before adding the diffusion barrier and copper. This innovation allows for the use of a thinner barrier layer, resulting in improved conductance of the via due to the effective diffusion barrier provided by the silicon nitride liner. A key feature of this process is the careful control of the etching process, particularly the relative selectivity of the etch between silicon oxide and silicon nitride.

Another notable patent is the "Method for forming metal silicide by laser irradiation." This invention discloses a method for forming metal silicide on an electronic structure by depositing a metal layer on top of a silicon layer capable of forming a metal silicide. The metal layer is then irradiated with laser energy, allowing for the formation of a layer of metal silicide at the interface. The unreacted metal layer is subsequently removed using a suitable etchant. This novel method can be applied to various metallic materials, including Ti, Co, W, Pt, Hf, Ta, Mo, Pd, and Cr, utilizing a pulse Excimer laser as the laser source.

Career Highlights

Kang-Cheng Lin is associated with the Industrial Technology Research Institute, where he continues to innovate and contribute to advancements in technology. His work has had a significant impact on the semiconductor industry, particularly in enhancing the efficiency and effectiveness of electronic components.

Collaborations

He has collaborated with notable coworkers, including Hong-Jye Hong and Hong-Woei Wu, further enriching his research and development efforts.

Conclusion

Kang-Cheng Lin's contributions to the field of semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing electronic manufacturing processes. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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