The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Dec. 07, 1998
Kang-Cheng Lin, Taipei, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A process for creating a metal filled, dual damascene opening, in a composite insulator layer, has been developed. The process features selective RIE procedures, used to create a wide diameter opening in an upper silicon oxide layer, and a narrow diameter opening in a lower silicon oxide layer. Small area, silicon nitride islands, or shapes, a component of the composite insulator layer, are used as a stop layer, during the selective RIE procedures. The use of small area, silicon nitride shapes, offers less composite insulator capacitance, than counterparts fabricated using larger area, silicon nitride stop layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile