Company Filing History:
Years Active: 1996
Title: The Innovative Journey of Kaili Jiao: Pioneering Thin Film Resistors
Introduction: Kaili Jiao, an accomplished inventor based in Williamsville, NY, has made significant strides in the field of electronics with her unique patent on thin film resistors comprising ruthenium oxide. With a focus on enhancing resistor technology, her work exemplifies innovation in material science and engineering.
Latest Patents: Kaili Jiao holds a patent for a novel approach to thin film resistors that integrate ruthenium oxide. In her first embodiment, a layer of ruthenium oxide is reactively deposited onto a substrate and subsequently annealed to adjust the temperature coefficient of resistance (TCR) and achieve stabilization. The second, bi-layer embodiment enhances the structure further by first depositing a layer of tantalum nitride, which is also annealed for stabilization. The final ruthenium oxide layer is then applied, allowing the bi-layer resistor to attain a near-zero effective TCR. This innovative design also includes a ruthenium oxide capping layer that serves as a protective barrier against chemical attacks.
Career Highlights: Jiao is affiliated with the State University of New York, where she contributes to research and development in materials science. Her work not only adds value to the academic environment but also pushes the boundaries of electronic component design. Her dedication to invention has been recognized within the university and the broader scientific community.
Collaborations: Throughout her career, Kaili Jiao has collaborated with notable colleagues, including Wayne K. Anderson and Franklyn M. Collins. These partnerships have facilitated the development of her innovative ideas and have strengthened the research output in their field.
Conclusion: Kaili Jiao’s contributions to the field of thin film resistors embody the spirit of innovation, showcasing her expertise and creativity. Her patent stands as a testament to her role as a forward-thinking inventor, and her work will inspire future advancements in electronic materials and devices.