The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 1996

Filed:

Nov. 09, 1993
Applicant:
Inventors:

Wayne Anderson, Hamburg, NY (US);

Franklyn M Collins, Lewiston, NY (US);

Quanxi Jia, Los Alamos, NM (US);

Kaili Jiao, Williamsville, NY (US);

Hoong J Lee, Amherst, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
338308 ; 338314 ; 338 / ; 1566561 ; 20419221 ; 29620 ;
Abstract

In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.


Find Patent Forward Citations

Loading…