Kaige Gao

Title: Kaige Gao: Innovator in Semiconductor Technology

Introduction

Kaige Gao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the fabrication methods of semiconductor structures.

Latest Patents

Kaige Gao holds a patent for a method titled "Forming metal plug through a hole in a device including a resistance layer and contacting embedded conductive structures." This patent outlines a semiconductor structure and its fabrication method. The method involves providing a substrate that includes a first region with a first metal structure and a second region with a second metal structure. It details the formation of a device layer on the substrate's top surfaces, the creation of through holes that expose portions of the metal structures, and the use of a selective metal growth process to form plugs in these holes.

Career Highlights

Throughout his career, Kaige Gao has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Kaige Gao has collaborated with esteemed colleagues, including Yi Lu and Xiaohui Zhuang. Their combined expertise has fostered innovation and development in their respective fields.

Conclusion

Kaige Gao's contributions to semiconductor technology through his patent and career achievements highlight his role as an influential inventor. His work continues to impact the industry positively.