Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Kaige Gao

Liang Wang

Wenjie Zhu

Yi Lu

Le Li

Yihui Lin

Xiaohui Zhuang

Jialin Zhao

Semiconductor structure and its fabrication method are provided. The method includes providing a substrate, where the substrate includes a first region having a first metal structure and a second region having a second metal structure; forming a device layer on each of top surfaces of the substrate, the first metal structure and the second metal structure; forming a first through hole in the device layer at the first region, where the first through hole exposes at least a portion of surfaces of the first metal structure, and forming a second through hole in the device layer at the second region, where the second through hole passes through the first device and exposes at least a portion of surfaces of the second metal structure; and using a selective metal growth process, forming a first plug in the first through hole and forming a second plug in the second through hole.

Forming metal plug through a hole in a device including a resistance layer and contacting embedded conductive structures

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Shanghai, China

Kaige Gao