Wuhan, China

Kai Yu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Inventor Kai Yu

Introduction

Kai Yu is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, particularly in the development of three-dimensional NAND memory technology. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

One of Kai Yu's notable patents is for a "Three-dimensional memory device and fabrication method." This patent describes a method for creating three-dimensional (3D) NAND memory devices. The fabrication method involves forming a conductor/insulator stack over a substrate, creating a dielectric layer of a dielectric material that includes atomic hydrogen over part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material. This process allows the atomic hydrogen to diffuse into the conductor/insulator stack, enhancing the performance of the memory device. He holds 1 patent in total.

Career Highlights

Kai Yu is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work at this company has positioned him as a key player in the advancement of NAND memory devices.

Collaborations

Some of his coworkers include Zhiyong Lu and Sheng Peng, who collaborate with him on various projects within the company.

Conclusion

Kai Yu's innovative contributions to the field of memory technology, particularly through his patent on three-dimensional NAND memory devices, highlight his role as a leading inventor in this domain. His work continues to influence advancements in memory technology and showcases the importance of innovation in the industry.

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