Zhuhai, China

Kai Hu

This inventor holds 1 USPTO granted patent. Top assignee: Innoscience (Zhuhai) Technology Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai Hu. Retrieved from https://idiyas.com/inventor/kai-hu-4dd8ivk3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: The Innovations of Kai Hu

Introduction

Kai Hu is a notable inventor based in Zhuhai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Kai Hu holds a patent for a semiconductor device and its manufacturing method. This invention includes a substrate, a first nitride semiconductor layer with a specific bandgap, and a second nitride semiconductor layer with a larger bandgap. The design also features a gate contact and a first field plate, which are crucial for the device's functionality.

Career Highlights

Kai Hu is associated with Innoscience Technology Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work is characterized by a commitment to advancing technology and improving device performance.

Collaborations

Some of his coworkers include Jinhan Zhang and Xiaoyan Zhang, who contribute to the collaborative environment at Innoscience Technology Co., Ltd.

Conclusion

Kai Hu's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a significant advancement in the field, showcasing his expertise and dedication to improving electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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