Kuching, Malaysia

Ka Siong Wisley Ung


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2017-2020

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3 patents (USPTO):Explore Patents

Title: Innovations of Ka Siong Wisley Ung

Introduction

Ka Siong Wisley Ung is a notable inventor based in Kuching, Malaysia. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents, his work focuses on methods of fabricating tunnel oxide layers for semiconductor devices.

Latest Patents

Among his latest patents is a method of fabricating a tunnel oxide layer for a semiconductor memory device. This method involves fabricating a first oxide layer on a substrate through a plasma oxidation process. Additionally, it includes the fabrication of at least one further oxide layer using a furnace oxidation process. During this process, reactive gases penetrate the first oxide layer and react with the silicon substrate to form a portion of the further oxide layer beneath the first oxide layer. Another patent details a similar method, but it utilizes an in-situ steam generation process for the first oxide layer.

Career Highlights

Ka Siong Wisley Ung has worked with reputable companies in the semiconductor industry, including X-Fab Semiconductor Foundries AG and X-Fab Semiconductor Foundries GmbH. His experience in these organizations has contributed to his expertise in semiconductor fabrication techniques.

Collaborations

He has collaborated with various professionals in his field, including his coworker Eng Gek Hee. Their joint efforts have likely enhanced the innovation and development of semiconductor technologies.

Conclusion

Ka Siong Wisley Ung's contributions to semiconductor technology through his patents and career experiences highlight his role as an influential inventor in the industry. His innovative methods for fabricating tunnel oxide layers are significant advancements in semiconductor memory devices.

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