The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Apr. 13, 2017
Applicant:
X-fab Semiconductor Foundries Ag, Erfurt, DE;
Inventors:
Eng Gek Hee, Kuching, MY;
Ka Siong Wisley Ung, Kuching, MY;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/11517 (2017.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/11517 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01);
Abstract
A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.