This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.
Company Filing History:
Years Active: 2011
Title: K S Ravindhran: Innovator in Thermal Management Technologies
Introduction
K S Ravindhran is a notable inventor based in Stockton, CA (US). He has made significant contributions to the field of thermal management technologies, particularly through his innovative patent related to composite carbon nanotube-based structures.
Latest Patents
Ravindhran holds a patent for "Composite carbon nanotube-based structures and methods for removing heat from solid-state devices." This invention involves an article of manufacture that includes a copper substrate plug with a front surface and a back surface. A catalyst is placed on top of a single surface of the copper substrate plug, along with a thermal interface material. This thermal interface material consists of a layer of carbon nanotubes that contacts the catalyst, with a filler material located between the carbon nanotubes. The carbon nanotubes are oriented substantially perpendicular to the single surface of the copper substrate plug. The design allows the copper substrate plug to be incorporated into a peripheral structure of a heat spreader or a heat sink. In another embodiment, the thermal interface material is applied to both the top and bottom surfaces of the copper substrate plug.
Career Highlights
K S Ravindhran is currently employed at Samsung Electronics Co., Ltd., where he continues to develop innovative solutions in thermal management. His work has been instrumental in enhancing the efficiency of solid-state devices.
Collaborations
Ravindhran has collaborated with notable colleagues such as Ephraim Suhir and Roger L Kroeze, contributing to advancements in their respective fields.
Conclusion
K S Ravindhran's contributions to thermal management technologies through his innovative patent demonstrate his expertise and commitment to advancing the field. His work at Samsung Electronics Co., Ltd. continues to influence the development of efficient solid-state devices.
