Eindhoven, Netherlands

Jörg Siegert

This inventor holds 1 USPTO granted patent. Top assignee: Ams Ag. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jörg Siegert. Retrieved from https://idiyas.com/inventor/jörg-siegert-9rcjmhs9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Jörg Siegert: Innovator in Semiconductor Technology

Introduction

Jörg Siegert is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Jörg Siegert holds a patent titled "Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via." This patent describes a process involving a substrate that is equipped with a dielectric, a metal layer embedded within the dielectric, and a metallic layer positioned on the metal layer. The invention details the formation of a via hole in the substrate and the dielectric, along with the application of an insulation layer and metallization in the via hole.

Career Highlights

Jörg Siegert is currently employed at AMS AG, a company known for its expertise in sensor solutions and analog ICs. His work has contributed to advancements in semiconductor devices, enhancing their functionality and efficiency.

Collaborations

Some of Jörg's coworkers include Stefan Jessenig and Georg Parteder, who collaborate with him on various projects within the semiconductor field.

Conclusion

Jörg Siegert's innovative work in semiconductor technology, particularly his patent on through-substrate vias, showcases his expertise and commitment to advancing the industry. His contributions continue to influence the development of efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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