The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Apr. 03, 2019
Applicant:

Ams Ag, Premstaetten, AT;

Inventors:

Jochen Kraft, Eindhoven, NL;

Georg Parteder, Eindhoven, NL;

Stefan Jessenig, Eindhoven, NL;

Franz Schrank, Eindhoven, NL;

Jörg Siegert, Eindhoven, NL;

Assignee:

AMS AG, Premstätten, AT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/481 (2013.01);
Abstract

A substrate is provided with a dielectric, a metal layer embedded in the dielectric, and a metallic layer arranged on the metal layer between the substrate and the metal layer. A via hole is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer is applied in the via hole and removed from above a contact area of the metal layer, and the metallic layer is completely removed from the contact area. A metallization is applied in the via hole on the contact area.


Find Patent Forward Citations

Kraft, Jochen. (2023). Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via (U.S. Patent No. 11764109). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11764109

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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