Eindhoven, Netherlands

Franz Schrank

This inventor holds 1 USPTO granted patent. Top assignee: Ams Ag. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Franz Schrank. Retrieved from https://idiyas.com/inventor/franz-schrank-gobggc0k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Franz Schrank: Innovator in Semiconductor Technology

Introduction

Franz Schrank is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Franz Schrank holds a patent titled "Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via." This patent describes a process involving a substrate that is equipped with a dielectric, a metal layer embedded within the dielectric, and a metallic layer positioned on the metal layer. The invention details the formation of a via hole in the substrate and the dielectric, along with the application of an insulation layer and metallization in the via hole.

Career Highlights

Franz Schrank is currently employed at AMS AG, a company known for its expertise in sensor solutions and analog ICs. His work has contributed to advancements in semiconductor devices, enhancing their functionality and efficiency.

Collaborations

Franz has collaborated with notable colleagues, including Georg Parteder and Stefan Jessenig, who share his commitment to innovation in semiconductor technology.

Conclusion

Franz Schrank's contributions to the semiconductor industry through his patent and work at AMS AG highlight his role as a key innovator in this field. His advancements continue to influence the development of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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