Jyun-Ting Hou

Title: Jyun-Ting Hou: Semiconductor Inventions in Deep-Trench Capacitor Technology.

Introduction

Jyun-Ting Hou is an inventor based in Taipei, Taiwan. His patent work focuses on semiconductor structures and deep-trench capacitor technology. He is associated with Taiwan Semiconductor Manufacturing Company Limited and has 3 patents.

Latest Patents

One of Hou’s latest inventions describes methods for forming trench capacitor cells. The method forms a trench in a substrate and places a blocking structure in part of the trench before forming first and second capacitors on either side. The capacitors contain conductor plates that directly contact the blocking structure, supporting the formation of semiconductor structures with carefully arranged capacitor components.

Another invention concerns contact arrangements for deep-trench capacitors. The disclosed semiconductor device has first and second trenches containing electrically isolated metal layers, with separate via structures contacting the respective layers. The vias are positioned between the trenches and immediately adjacent to one another, providing a defined arrangement for electrical connections.

Career Highlights

Hou’s disclosed inventions address the structure and electrical connectivity of capacitors integrated into semiconductor substrates. His work reflects the detailed engineering involved in arranging trench features, conductor plates, metal layers, and vias within semiconductor devices.

Collaborations

Hou is associated with Taiwan Semiconductor Manufacturing Company Limited. His listed coworker is Meei-Shiou Chern.

Conclusion

Jyun-Ting Hou’s patent portfolio highlights contributions to semiconductor manufacturing, particularly the design and formation of deep-trench capacitor structures and their electrical contacts.