Kaohsiung, Taiwan

Jyun-Hong Huang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: National Yang Ming Chiao Tung University. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jyun-Hong Huang. Retrieved from https://idiyas.com/inventor/jyun-hong-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2019

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1 patent (USPTO):Explore Patents

Title: Jyun-Hong Huang: Innovator in Semiconductor Technology

Introduction

Jyun-Hong Huang is an inventor based in Hsinchu, Taiwan. He is known for his contributions to semiconductor technology, focusing on methods for forming semiconductor structures. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Huang's recent patent applications include "SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME." This application describes a method for forming a semiconductor structure that involves creating an active region, an isolation structure, and a gate dielectric layer. The process also includes forming a gate electrode layer and removing portions of the gate dielectric layer to create a trench, while leaving protection features intact. Another application, "Methods For Forming Isolation Structures," outlines a method that includes receiving a workpiece with semiconductor fins and a gate structure, followed by the formation of a fin isolation trench and dielectric layer.

Conclusion

Jyun-Hong Huang is an emerging inventor in the field of semiconductor technology, with promising applications that could lead to significant advancements in the industry. His work demonstrates a commitment to innovation and the development of new methods in semiconductor structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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