Helsinki, Finland

Jyrki Kaitila

This inventor holds 21 USPTO granted patents, primarily in Bulk Acoustic Wave Devices. Top assignees: Avago Technologies Wireless IP (Singapore) Pte. Ltd., Nokia Mobile Phones Limited, Nokia Corporation. Active years: 2002-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jyrki Kaitila. Retrieved from https://idiyas.com/inventor/jyrki-kaitila

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 57.1

Average Co-Inventor Count = 3.0

ph-index = 13

Forward Citations = 918(Granted Patents)


Location History:

  • Helsinki, FI (2002 - 2010)
  • Riemerling, DE (2010 - 2017)

Company Filing History:


Years Active: 2002-2017

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Areas of Expertise:
Bulk Acoustic Wave
Resonator Filter
Piezoelectric Material
Thin-Film BAW
Wafer-Level Tuning
Acoustic Reflector
Conductive Mirror
Coupled Resonators
Dampening Material
Bridge Formation
Rare-Earth Doping
Multi-Resonator
21 patents (USPTO):Explore Patents

Title: Innovations of Jyrki Kaitila: A Pioneer in Piezoelectric Materials

Introduction

Jyrki Kaitila is a notable inventor based in Helsinki, Finland, recognized for his contributions to the field of piezoelectric materials. With a remarkable portfolio of 21 patents, Kaitila has made significant strides in advancing technology related to rare-earth doped piezoelectric materials, showcasing his commitment to innovation and research.

Latest Patents

Among Kaitila's latest inventions are groundbreaking methods related to piezoelectric materials. One significant patent outlines a method for fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation. This method involves providing a substrate, flowing hydrogen initially, and subsequently introducing a first component to create the rare-earth doped piezoelectric material. The process culminates in sputtering the material from a target onto the substrate, greatly enhancing material efficiency and performance.

Another key patent describes a bulk acoustic wave (BAW) resonator comprised of a bridge formed within the piezoelectric layer. This BAW structure includes a first electrode on a substrate, a piezoelectric layer above it, and a second electrode on top of the piezoelectric layer. The innovative design features a bridge encompassed by piezoelectric material, which contributes to improved performance in acoustic applications.

Career Highlights

Throughout his career, Jyrki Kaitila has collaborated with leading technology companies, including Avago Technologies Wireless IP (Singapore) Pte. Ltd. and Nokia Mobile Phones Limited. His work in these organizations has further solidified his reputation as a pioneer in the development of advanced electronic materials.

Collaborations

Kaitila has worked alongside distinguished colleagues such as Juha Ellä and Pasi Tikka. Their combined expertise demonstrates a synergistic approach to innovation, emphasizing the importance of collaboration in advancing technological solutions.

Conclusion

Jyrki Kaitila's innovative contributions to the field of piezoelectric materials have not only established him as a prominent inventor but also as a vital player in the technological landscape. His various patents reflect a deep understanding of material science and engineering, positioning him at the forefront of innovation. Through his continued efforts and collaborations, Kaitila is expected to inspire future advancements in the realm of electronics and materials engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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