This inventor holds 6 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2001-2003.
Location History:
- Hsinchu Hsien, TW (2001)
- Hsin-Chu, TW (2001 - 2003)
Company Filing History:
Years Active: 2001-2003
Title: Innovations of Jyh-Min Jiang
Introduction
Jyh-Min Jiang is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on high voltage protection devices and bipolar transistors, showcasing his expertise in electronic engineering.
Latest Patents
One of his latest patents is a high voltage ESD protection device with very low snapback voltage. This device layout is designed to protect NMOS high voltage transistors by integrating an SCR protection device with two NMOS transistors. The innovative design includes a shared n-type doped drain area, which enhances the device's performance and reliability. Another notable patent is for a high voltage transistor using a P+ buried layer. This design replaces the conventional buried subcollector with a buried P+ layer, allowing for much higher breakdown voltages and improved manufacturing processes.
Career Highlights
Jyh-Min Jiang works at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His contributions have been instrumental in advancing the technology used in high voltage applications. His patents reflect a deep understanding of semiconductor physics and engineering principles.
Collaborations
He has collaborated with notable coworkers such as Ruey-Hsin Liu and Jei-Feng Hwang, further enhancing the innovative environment at his workplace.
Conclusion
Jyh-Min Jiang's work exemplifies the spirit of innovation in the semiconductor industry. His patents not only contribute to technological advancements but also pave the way for future developments in high voltage electronics.