Jyh-J Huang

Title: Jyh-J Huang: Innovator in Semiconductor Technology

Introduction: Jyh-J Huang is a prominent inventor based in Hsin Chu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for preventing aluminum intrusions in semiconductor wafers.

Latest Patents: Jyh-J Huang holds 1 patent for his invention titled "Method for preventing aluminum intrusions." This patent describes a semiconductor wafer that includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.

Career Highlights: Jyh-J Huang is currently associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing semiconductor manufacturing processes and enhancing the performance of semiconductor devices.

Collaborations: Throughout his career, Jyh-J Huang has collaborated with notable colleagues, including Horng-Bor Lu and Chi-Jung Lin. These collaborations have fostered innovation and contributed to the success of various projects in the semiconductor field.

Conclusion: Jyh-J Huang's contributions to semiconductor technology exemplify the spirit of innovation. His patented method for preventing aluminum intrusions showcases his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.