Ossining, NY, United States of America

Jurij R Paraszcszak

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jurij R Paraszcszak. Retrieved from https://idiyas.com/inventor/jurij-r-paraszcszak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Jurij R Paraszcszak: Innovator in Halogenated Polystyrenes

Introduction

Jurij R Paraszcszak is a notable inventor based in Ossining, NY (US). He has made significant contributions to the field of materials science, particularly in the development of halogenated polystyrenes. His work has implications for various applications, including electron beam, X-ray, and photo resists.

Latest Patents

Jurij holds a patent for "Halogenated polystyrenes for electron beam, X-ray and photo resists." This patent describes poly(halogenated styrene) compositions that have a molecular weight range of approximately 1×10^5 to 1×10^6 and a dispersivity of about 1.5 to 2.5, which are useful as negative resists. He has 1 patent to his name.

Career Highlights

Jurij is currently employed at International Business Machines Corporation, commonly known as IBM. His role at IBM allows him to engage in cutting-edge research and development, contributing to the advancement of technology in various sectors.

Collaborations

Some of Jurij's coworkers include John J Liutkus and Jane M Shaw. Their collaborative efforts in research and development have further enhanced the innovative environment at IBM.

Conclusion

Jurij R Paraszcszak is a distinguished inventor whose work in halogenated polystyrenes has made a significant impact in the field of materials science. His contributions continue to influence advancements in technology and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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