This inventor holds 1 USPTO granted patent. Top assignee: Peking University. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Innovations by Jupeng Cao in Composite Materials
Introduction
Jupeng Cao is a notable inventor based in Shenzhen, China. He has made significant contributions to the field of materials science, particularly in the development of high dielectric constant composite materials. His innovative work has implications for organic thin film transistors, which are essential components in modern electronic devices.
Latest Patents
Jupeng Cao holds a patent for a high dielectric constant composite material and its application in organic thin film transistors. The patent describes a method that utilizes a sol-gel process to create a functional terminal group-containing silica sol. This sol is then cross-linked with an organic polymer to form a composite sol, which serves as the dielectric material for organic thin film transistors. The resulting device demonstrates a mobility of 5 cm²/V·s, surpassing that of traditional silicon dioxide (SiO2) materials. This method offers advantages such as a simpler process, lower costs, and suitability for large-area preparation, making it highly valuable in the market.
Career Highlights
Jupeng Cao is affiliated with Peking University, where he continues to advance research in materials science. His work has garnered attention for its practical applications and innovative approaches to traditional processes. With a focus on enhancing the performance of electronic devices, he has positioned himself as a key figure in the field.
Collaborations
Jupeng Cao has collaborated with notable colleagues, including Hong Meng and Lijia Yan. Their combined expertise contributes to the advancement of research and development in composite materials and electronic applications.
Conclusion
Jupeng Cao's contributions to the field of high dielectric constant composite materials represent a significant advancement in the development of organic thin film transistors. His innovative methods and collaborative efforts continue to influence the landscape of materials science and electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
