The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Sep. 06, 2017
Peking University Shenzhen Graduate School, Shenzhen, CN;
Hong Meng, Shenzhen, CN;
Jupeng Cao, Shenzhen, CN;
Lijia Yan, Shenzhen, CN;
Yu He, Shenzhen, CN;
Xiaoyun Wei, Shenzhen, CN;
Yanan Zhu, Shenzhen, CN;
Ting Li, Shenzhen, CN;
PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL, Shenzhen, CN;
Abstract
A high dielectric constant composite material and method for preparing organic thin film transistor using the material as dielectric. The method includes: using sol-gel method, hydrolyzing terminal group-containing silane coupling agent to form functional terminal group-containing silica sol, cross-linked with organic polymer to form composite sol as material of dielectric of organic thin film transistor; forming film by solution method such as spin coating, dip coating, inkjet printing, 3D printing, etc., forming dielectric after curing; preparing semiconductor and electrode respectively to prepare organic thin film transistor device, which, based on composite dielectric material, has mobility of 5 cm2/V·s, exceeding that of using SiO2, having low threshold voltage and no hysteresis effect. Compared with traditional processes like SiO2 thermal oxidation, above method has advantages of simple process, low cost, suitable for large-area preparation, with great market application value.