Company Filing History:
Years Active: 2018
Title: Innovations of Junyoub Lee in GaN Substrate Separation
Introduction
Junyoub Lee is a notable inventor based in Gwangju, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the area of Gallium Nitride (GaN) substrates. His innovative methods aim to enhance the efficiency and cost-effectiveness of semiconductor fabrication processes.
Latest Patents
Junyoub Lee holds a patent for a "Separation method of GaN substrate by wet etching." This method employs a chemical lift-off technique, which involves forming oxide layers and GaN columns on a substrate. The process includes creating an n-GaN layer, followed by the sequential formation of an active layer, a p-GaN layer, and a p-type electrode. The removal of the oxide layers and wet etching of the n-GaN columns allows for the separation of the substrate. This innovative approach not only improves the epitaxial growth of GaN but also reduces fabrication costs through a simplified process. Additionally, it enhances the luminous area and light extraction efficiency.
Career Highlights
Junyoub Lee is affiliated with the Gwangju Institute of Science and Technology, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving the performance of GaN-based devices.
Collaborations
Some of his notable coworkers include Dong-Seon Lee and Duk-Jo Kong, who contribute to the collaborative efforts in research and development within the institute.
Conclusion
Junyoub Lee's innovative methods in GaN substrate separation represent a significant advancement in semiconductor technology. His contributions not only enhance the efficiency of fabrication processes but also pave the way for improved performance in electronic devices.