The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Aug. 13, 2014
Gwangju Institute of Science and Technology, Gwangju, KR;
Dong-Seon Lee, Gwangju, KR;
Duk-Jo Kong, Gwangju, KR;
Junyoub Lee, Gwangju, KR;
Chang Mo Kang, Gwangju, KR;
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Abstract
Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency.