Gwangju Institute of Science and Technology

Junyoub Lee

Chang Mo Kang

Dong-Seon Lee

Duk-Jo Kong

Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency.

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Gwangju, South Korea

Junyoub Lee