Nirasaki, Japan

Junya Suzuki

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junya Suzuki. Retrieved from https://idiyas.com/inventor/junya-suzuki-atc7l0ls

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Junya Suzuki - Innovator in Substrate Processing Technologies

Introduction

Junya Suzuki is an inventor based in Nirasaki, Japan. He is known for his contributions to substrate processing methods and systems. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

One of his notable applications is for a "SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM." This method involves preparing a substrate with a recess that has an overhang. It includes forming a sacrificial layer on the substrate and a sealing layer on top of it, which has a higher etching resistance than the sacrificial layer. The process also involves plasma-etching the substrate to create a sealing portion that forms an air gap structure.

Another significant application is for a "FILM FORMING METHOD AND FILM FORMING APPARATUS." This method describes the formation of a SiOC-based film by preparing a substrate and forming a SiC-based film using carbon and silicon precursors. The process includes oxidizing the SiC-based film and performing plasma processing to achieve the desired film thickness.

Conclusion

Junya Suzuki's work in substrate processing showcases his innovative approach to developing advanced materials and methods. His latest patent applications reflect his commitment to pushing the boundaries of technology in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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