Company Filing History:
1 out of 55 
1 out of 1 Years Active: 2022
Title: Innovations of Junxing Wang in Power MOSFET Technology
Introduction
Junxing Wang is a notable inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFETs. His innovative approach has led to advancements that enhance the performance and reliability of these devices.
Latest Patents
Junxing Wang holds a patent for a "Power MOSFET active gate drive based on negative feedback mechanism." This invention introduces a negative feedback mechanism into the gate drive, proposing a negative feedback active gate drive (NFAGD) for silicon carbide (SiC) and gallium nitride (GaN) semiconductor devices. The NFAGD is designed to fully utilize the high switching-speed capability of these devices in a phase-leg configuration. An auxiliary P-channel MOSFET is incorporated to construct the negative feedback control mechanism. This innovative drive can automatically attenuate disturbances from the complementary device of the phase-leg, ensuring stable gate voltage during high-speed switching operations without sacrificing switching speed. The NFAGD features a simple structure that can be realized using a push-pull drive circuit, a drive resistor, an auxiliary MOSFET, and an auxiliary capacitor, eliminating the need for additional logical circuits.
Career Highlights
Junxing Wang has worked at prestigious institutions, including Beijing Jiaotong University and Global Power Technology Co., Ltd. His experience in these organizations has allowed him to collaborate with other experts in the field and contribute to groundbreaking research and development.
Collaborations
Some of Junxing Wang's notable coworkers include Tiancong Shao and Zhijun Li. Their collaborative efforts have further advanced the research and application of semiconductor technologies.
Conclusion
Junxing Wang's innovative work in power MOSFET technology exemplifies the impact of negative feedback mechanisms on enhancing semiconductor performance. His contributions continue to influence the field and pave the way for future advancements.