The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Apr. 29, 2021
Beijing Jiaotong University, Beijing, CN;
Global Power Technology Co., Ltd., Beijing, CN;
Tiancong Shao, Beijing, CN;
Zhijun Li, Beijing, CN;
Trillion Q. Zheng, Beijing, CN;
Bo Huang, Beijing, CN;
Junxing Wang, Beijing, CN;
BEIJING JIAOTONG UNIVERSITY, Beijing, CN;
GLOBAL POWER TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
This invention introduces the negative feedback into the gate drive. It proposes a negative feedback active gate drive (NFAGD) for silicon carbide (SiC) and gallium nitride (GaN) semiconductor devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. An auxiliary P-channel MOSFET is introduced to construct a negative feedback control mechanism. Due to the negative feedback mechanism, the proposed drive can automatically attenuate the disturbance from the complementary device of the phase-leg. The negative feedback active gate drive (NFAGD) has a simple structure and easy to be realized using a push-pull drive circuit, a drive resistor, an auxiliary MOSFET and an auxiliary capacitor, without involving any additional logical circuits. Functionally, the negative feedback active gate drive (NFAGD) can automatically suppress the induced gate-source voltage and make the gate voltage of the MOSFET stable even during high-speed switching operation without sacrificing the switching speed of the MOSFET.