Ecublens, Switzerland

Junrui Zhang

This inventor holds 1 USPTO granted patent. Top assignee: Ecole Polytechnique Federale De Lausanne. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junrui Zhang. Retrieved from https://idiyas.com/inventor/junrui-zhang-vn7oatal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Junrui Zhang: Innovator in Field-Effect Transistor Technology

Introduction

Junrui Zhang is a prominent inventor based in Ecublens, Switzerland. He has made significant contributions to the field of sensor technology, particularly through his innovative work on field-effect transistors. His research focuses on developing devices that can sense ions, molecules, and biomarkers in various fluids.

Latest Patents

Junrui Zhang holds 1 patent for a Field-Effect Transistor device or sensor. This invention comprises at least one drain region, at least one source region, and at least one channel region. It also includes a first gate connected to the channel region and a stack of metal layers or extensions. The device is designed to permit the sensing of ions, molecules, and biomarkers, making it a valuable tool in various scientific and medical applications.

Career Highlights

Zhang is affiliated with the École Polytechnique Fédérale de Lausanne (EPFL), where he continues to advance his research in sensor technology. His work has garnered attention for its potential applications in health monitoring and diagnostics.

Collaborations

He collaborates with notable colleagues such as Francesco Bellando and Erick Garcia Cordero, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Junrui Zhang's contributions to field-effect transistor technology exemplify the impact of innovative thinking in the realm of sensor development. His work not only enhances scientific understanding but also paves the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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