The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 21, 2019
Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;
Junrui Zhang, Ecublens, CH;
Francesco Bellando, Renens, CH;
Erick Garcia Cordero, Lausanne, CH;
Mihai Adrian Ionescu, Ecublens, CH;
ECOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE (EPFL), Lausanne, CH;
Abstract
The present disclosure concerns a Field-Effect Transistor device or sensor comprising at least one drain region, at least one source region, at least a channel region, at least a first gate connected to the channel region, at least one stack comprising at least one metal layer or metal extension and at least one via layer or via extension; or a plurality of alternating (i) metal layers or metal extensions and (ii) via layers or via extensions, at least one second gate or second layer connected to the at least one first gate by the at least one stack, the at least one second gate or second layer permitting sensing of ions, and/or molecules and/or biomarkers, and at least one microfluidic channel or structure connected to or provided on the at least one second gate or second layer.