Ibaraki, Japan

Junichiro Horiuchi

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junichiro Horiuchi. Retrieved from https://idiyas.com/inventor/junichiro-horiuchi-ribaxfmb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1982

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1 patent (USPTO):Explore Patents

Title: Innovations by Junichiro Horiuchi

Introduction

Junichiro Horiuchi is a notable inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on improving the efficiency and effectiveness of dielectric insulator substrates.

Latest Patents

Horiuchi holds a patent for a "Process for producing a dielectric insulator separated substrate." This innovation involves creating an improved dielectric insulator separated substrate for semiconductor integrated circuits. The process includes forming a lamination of at least three thin-polycrystalline layers with dielectric films interposed between them on a thick polycrystalline layer of the substrate. Each thin-polycrystalline layer's thickness is represented by a specific formula, enhancing the substrate's performance.

Career Highlights

Horiuchi is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to contribute to advancements in semiconductor technology. His expertise in this area has positioned him as a valuable asset to the company.

Collaborations

Horiuchi collaborates with Hideyuki Yagi, a fellow innovator. Their partnership has fostered a creative environment that encourages the development of new technologies.

Conclusion

Junichiro Horiuchi's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the industry and pave the way for future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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