The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1982
Filed:
Apr. 10, 1980
Applicant:
Inventors:
Junichiro Horiuchi, Ibaraki, JP;
Hideyuki Yagi, Ibaraki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29580 ; 2957 / ; 148-15 ; 148174 ; 156631 ; 156645 ; 156649 ; 156662 ; 357 49 ; 357 54 ; 357 56 ; 357 59 ; 427 93 ;
Abstract
An improved dielectric insulator separated substrate for semiconductor integrated circuits is obtained by forming a lamination of at least three thin-polycrystalline layers and dielectric films interposed therebetween on a thick polycrystalline layer of the substrate. A thickness x(.mu.m) of each of the thin-polycrystalline layers is represented by the formula: