Junichi Shibata

Title: Junichi Shibata: Innovator in Semiconductor Technology

Introduction

Junichi Shibata is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His innovative work has paved the way for advancements in semiconductor devices and manufacturing methods.

Latest Patents

Shibata's latest patents include a semiconductor device and a method of manufacturing the same. In his first patent, a first insulating film is formed on a semiconductor substrate, followed by the creation of an interconnect groove filled with a metal film, resulting in the formation of a first interconnect. Additionally, a protective film is applied to the first insulating film and the first interconnect, with the surface exposed to reactive gas to create a reaction layer at the interface. His second patent focuses on a method of manufacturing a semiconductor device, where a high-density N-type diffusion layer formed in a separation area reduces the collector current flowing through a parasitic NPN transistor. This innovation allows for the use of a normal CMOS process to enhance resistance to noise between adjacent terminals while controlling chip size.

Career Highlights

Throughout his career, Junichi Shibata has worked with notable companies, including Panasonic Corporation and Panasonic Intellectual Property Management Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Shibata has collaborated with esteemed colleagues, including Takeshi Harada and Akira Ueki. Their combined efforts have further advanced the field of semiconductor devices and manufacturing techniques.

Conclusion

Junichi Shibata's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, showcasing the importance of innovation in technology.