Suwon, South Korea

Junha Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junha Hwang. Retrieved from https://idiyas.com/inventor/junha-hwang-lfsrv6c6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Junha Hwang: Memory-System Innovation at Samsung Electronics

Introduction

Junha Hwang is an inventor based in Suwon, South Korea, associated with Samsung Electronics. His patent work addresses memory-device control, including refresh operations and error check and scrub (ECS) functionality.

Latest Patents

Hwang is associated with 1 patent: “Memory Device Performing ECS Operation, Operation Method of the Memory Device, Memory System, Electronic Device, and Electronic System.” The invention describes a memory device with a cell array, a refresh control circuit, and control logic. The control logic receives ECS setting data from a memory controller, stores it in a mode register, and uses that data to provide a target row address for refresh operations in response to a refresh command.

Career Highlights

Hwang’s listed patent reflects work on coordinating ECS settings with memory refresh control. The disclosed approach is designed to direct refresh operations to a target memory-cell row based on the selected ECS mode.

Collaborations

Hwang’s listed coworkers include Youngbin Lee and Kangil Kim. The patent identifies a memory controller as part of the system’s operation, but the provided information does not specify additional collaborators.

Conclusion

Junha Hwang’s patent work at Samsung Electronics focuses on memory-system reliability through the coordination of ECS settings and refresh operations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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