Memory device performing ecs operation, operation method of the memory device, memory system, electronic device, and electronic system

Abstract

A memory device is provided. The memory device includes: a memory cell array including a plurality of memory cell rows; a refresh control circuit configured to output a refresh row address to control a refresh operation to be performed on at least one memory cell row among the plurality of memory cell rows; and a control logic circuit configured to receive, from a memory controller, error check and scrub (ECS) setting data corresponding to a mode among a plurality of modes, store the ECS setting data in a mode register, and provide a target row address of a memory cell row to be refreshed to the refresh control circuit based on a value of the ECS setting data in response to a refresh command provided from the memory controller.