This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Ulvac, Inc.. Active years: 2022.
Company Filing History:
Years Active: 2022
Title: Jungo Onoda: Innovator in Oxide Semiconductor Technology
Introduction
Jungo Onoda is a notable inventor based in Chigasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on oxide semiconductor thin films.
Latest Patents
Onoda holds a patent for an oxide semiconductor thin film, thin film transistor, method producing the same, and sputtering target. This invention includes an oxide semiconductor that primarily contains indium (In), tin (Sn), and germanium (Ge). The atom ratio of Ge/(In+Sn+Ge) is specified to be between 0.07 and 0.40. This unique composition allows for the achievement of transistor characteristics with a mobility of 10 cm/Vs or more.
Career Highlights
Jungo Onoda is currently associated with Ulvac, Inc., where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the performance of thin film transistors, which are crucial for various electronic applications.
Collaborations
Onoda has collaborated with notable colleagues, including Taku Hanna and Motoshi Kobayashi. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.
Conclusion
Jungo Onoda's contributions to oxide semiconductor technology exemplify the impact of innovative thinking in the field of electronics. His patent and ongoing work at Ulvac, Inc. highlight the importance of collaboration and research in driving technological advancements.